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IRF1404ZLPBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZLPBF

Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZLPBF

Advanced Process Technology

IRF

International Rectifier

IRF1404ZPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404ZPBF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZS

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1404ZS

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404ZS

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1404ZS_L

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404ZSPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404ZSPBF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSTRL

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404ZSTRLPBF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRFBA1404

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404P

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404PPBF

AUTOMOTIVEMOSFETHEXFET?PowerMOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle

IRF

International Rectifier

IRFBA1404PPBF

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF1404ZLPBF

  • 功能描述：

    MOSFET MOSFT 40V 190A 3.7mOhm 100nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
24+
TO-262
193
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
22+
TO-262
8900
英瑞芯只做原裝正品!!!
 詢價
IR
TO-262
68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
 詢價
INFINEON/IR
16+
TO-262
1120
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IRF1404ZLPBF供應(yīng)商 更新時間2025-1-5 15:15:00

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