零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF1404ZS | AUTOMOTIVE MOSFET Advanced Process Technology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF1404ZS | Advanced Process Technology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | |
IRF1404ZS | Advanced Process Technology | IRF International Rectifier | IRF | |
IRF1404ZS | Isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
AUTOMOTIVE MOSFET Advanced Process Technology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
Advanced Process Technology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
Advanced Process Technology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETHEXFET?PowerMOSFET Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET-RPowerMOSFET Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A) | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號:
IRF1404ZS
- 制造商:
International Rectifier
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO263-3 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
35890 |
詢價(jià) | |||
IR |
24+ |
D2-Pak |
8866 |
詢價(jià) | |||
IR |
2020+ |
TO-263 |
544 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
24+ |
SOT-263 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
IR |
23+ |
D2-Pak |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
22+23+ |
TO-263 |
14734 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- IRF1404ZSTRLPBF
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