首頁 >IRF1404ZS>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRF1404ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404ZS

Advanced Process Technology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1404ZS

Advanced Process Technology

IRF

International Rectifier

IRF1404ZS

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1404ZS_L

AUTOMOTIVE MOSFET Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404ZSPBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSPBF

Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSTRLPBF

Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSPBF

Advanced Process Technology

IRF

International Rectifier

IRF1404ZSTRL

Advanced Process Technology

IRF

International Rectifier

IRFBA1404

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404P

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404PPBF

AUTOMOTIVEMOSFETHEXFET?PowerMOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle

IRF

International Rectifier

IRFBA1404PPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1404

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL1404L

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404PBF

HEXFET?PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A)

IRF

International Rectifier

IRL1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRF1404ZS

  • 制造商:

    International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
INFINEON/英飛凌
23+
TO263-3
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
2020+
TO-263
544
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
IR
24+
SOT-263
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IR
22+23+
TO-263
14734
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
更多IRF1404ZS供應(yīng)商 更新時(shí)間2025-1-5 13:00:00