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IRF1404ZS_L

AUTOMOTIVE MOSFET Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404ZSPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404ZSPBF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404ZSTRL

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404ZSTRLPBF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRFBA1404

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404P

PowerMOSFET(Vdss=40V,Rds(on)=3.7mohm,Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404PPBF

AUTOMOTIVEMOSFETHEXFET?PowerMOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle

IRF

International Rectifier

IRFBA1404PPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1404

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL1404L

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404PBF

HEXFET?PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A)

IRF

International Rectifier

IRL1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1404S

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404SPBF

AdvancedProcessTechnology

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
24+
TO-263
45000
原裝現(xiàn)貨假一賠十
詢價(jià)
IR
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
IR
07+
原廠原裝
52000
自己公司全新庫存絕對(duì)有貨
詢價(jià)
IR
2020+
TO263
30
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
ir
23+
NA
2026
專做原裝正品,假一罰百!
詢價(jià)
更多IRF1404ZS_L供應(yīng)商 更新時(shí)間2025-1-7 9:00:00