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IRFBA1404

Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404P

Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. Benefits AdvancedProcessTechnology UltraLowOn-Resistance Increas

IRF

International Rectifier

IRFBA1404PPBF

AUTOMOTIVE MOSFET HEXFET? Power MOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingle

IRF

International Rectifier

IRFBA1404PPBF

Advanced Process Technology

IRF

International Rectifier

IRFBA1404PPBF_15

Advanced Process Technology

IRF

International Rectifier

IRL1404

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL1404L

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404PBF

HEXFET?PowerMOSFET(VDSS=40V,RDS(on)=4.0m廓,ID=160A)

IRF

International Rectifier

IRL1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1404S

HEXFET-RPowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1404SPFF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRL1404Z

AUTOMOTIVEMOSFET

IRF

International Rectifier

IRL1404Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL1404ZL

AUTOMOTIVEMOSFET

IRF

International Rectifier

IRL1404ZLPBF

AUTOMOTIVEMOSFETHEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRFBA1404

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

供應商型號品牌批號封裝庫存備注價格
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
INFINEON
1503+
SUPER-220?
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
詢價
Infineon Technologies
22+
Super220?3 (Straight Leads)
9000
原廠渠道,現(xiàn)貨配單
詢價
Infineon Technologies
21+
Super220?3 (Straight Leads)
13880
公司只售原裝,支持實單
詢價
Infineon Technologies
23+
Super220?3 (Straight Leads)
9000
原裝正品,支持實單
詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務
詢價
Infineon Technologies
2022+
Super-220?-3(直引線)
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
INFINEON
23+
Super-220-3 (Straight Leads)
8000
只做原裝現(xiàn)貨
詢價
更多IRFBA1404供應商 更新時間2025-1-3 10:00:00