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IRF1405ZS-7PPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF1405ZS-7PPBF
廠商型號

IRF1405ZS-7PPBF

功能描述

HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

文件大小

696.52 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-3 15:16:00

IRF1405ZS-7PPBF規(guī)格書詳情

VDSS = 55V

RDS(on) = 4.9m?

ID = 120A

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRF1405ZS-7PPBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 4.9mOhms 150nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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