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IRF1902PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1902PBF規(guī)格書詳情
Description
These N-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.
■ Ultra Low On-Resistance
■ N-Channel MOSFET
■ Surface Mount
■ Available in Tape & Reel
■ Lead-Free
產(chǎn)品屬性
- 型號：
IRF1902PBF
- 功能描述：
MOSFET 20V 1 N-CH HEXFET 85mOhms 5nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
ROHS |
56520 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
24+ |
SOP |
48000 |
詢價 | ||||
IR |
24+ |
3.9mm |
2560 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
IR |
2016+ |
SOP8 |
6523 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
17+ |
SO-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IOR |
20+ |
SOP8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價 |
