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IRF2N60-252中文資料SUNTAC數(shù)據(jù)手冊PDF規(guī)格書
IRF2N60-252規(guī)格書詳情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
IRF2N60-252
- 制造商：
SUNTAC
- 制造商全稱：
SUNTAC
- 功能描述：
POWER MOSFET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
QUALCOM |
2020+ |
TQFP48 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
QUALCOMM |
20+ |
QFP-48 |
500 |
樣品可出,優(yōu)勢庫存歡迎實(shí)單 |
詢價(jià) | ||
IR |
24+ |
SOP-8 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
IR |
23+ |
SSOP-8 |
8238 |
詢價(jià) | |||
VB |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IOR |
24+ |
QFP-48 |
20 |
詢價(jià) | |||
QUALCMM |
1822+ |
TQFP48 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
IOR |
21+ |
SOP-8 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) | ||
IR |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |
