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IRF3205PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRF3205PBF規(guī)格書(shū)詳情
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF3205PBF
- 功能描述：
MOSFET MOSFT 55V 98A 8mOhm 97.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO220 |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán) |
詢(xún)價(jià) | ||
23+ |
TO-220 |
35000 |
專(zhuān)注原裝正品現(xiàn)貨特價(jià)中量大可定 |
詢(xún)價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO-220 |
15000 |
詢(xún)價(jià) | |||
IR |
24+ |
TO-220 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)! |
詢(xún)價(jià) | ||
INFINEON |
23+ |
TO-220 |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-220 |
27209 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢(xún)價(jià) | ||
TO-220 |
23+ |
NA |
15659 |
振宏微專(zhuān)業(yè)只做正品,假一罰百! |
詢(xún)價(jià) | ||
Infineon/英飛凌 |
21+ |
TO-220(TO-220-3) |
6000 |
原裝現(xiàn)貨正品 |
詢(xún)價(jià) | ||
INFINEON |
21+20 |
TO220 |
39000 |
全新原裝公司現(xiàn)貨
|
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
22+ |
TO-220 |
8000 |
原裝正品現(xiàn)貨假一罰十 |
詢(xún)價(jià) |
