首頁 >IRF3415LPBF>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤42m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
JJW | ||||
JJW | ||||
JJW | ||||
P-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
P-ChannelEnhancementModeFieldEffectTransistor | TGS Tiger Electronic Co.,Ltd | TGS | ||
P-ChannelMOSFET ■Features ●VDS(V)=-20V ●ID=-5A(VGS=-4.5V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
Dedicated-Recycle Description TheKSD3SeriesDigi-Timerisacosteffectiveapproachfor ON/OFFrecyclingapplications.Theontimeisequaltothe offtime.AnadjustmentoftheRTwillchangethetimedelays ofbothonandofftimes.Thisseriesisdesignedforgeneral purposecommercialandindustrialappl | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
LCEP-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH |
詳細(xì)參數(shù)
- 型號(hào):
IRF3415LPBF
- 制造商:
International Rectifier
- 功能描述:
N CHANNEL MOSFET, 150V, 43A, TO-262, Transistor
- Polarity:
N Channel, Continuous D
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-262 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
24+ |
TO-262-3 |
77 |
詢價(jià) | |||
IR |
23+ |
TO-262 |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
IR |
2020+ |
TO-262 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
21+ |
TO-262 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
22+ |
TO-262 |
8900 |
英瑞芯只做原裝正品!!! |
詢價(jià) | ||
IR |
TO-262 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
11+ |
TO-262 |
3842 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
22+ |
TO-262 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) |
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