首頁(yè)>IRF3710SPBF>規(guī)格書詳情
IRF3710SPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
IRF3710SPBF |
功能描述 | HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A ) |
文件大小 |
279.47 Kbytes |
頁(yè)面數(shù)量 |
11 頁(yè) |
生產(chǎn)廠商 | International Rectifier |
企業(yè)簡(jiǎn)稱 |
IRF |
中文名稱 | International Rectifier官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-10-26 15:11:00 |
IRF3710SPBF規(guī)格書詳情
VDSS = 100V
RDS(on) = 23m?
ID = 57A
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號(hào):
IRF3710SPBF
- 功能描述:
MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
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