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IRF3808LPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF3808LPBF規(guī)格書詳情
Description
This Advanced Planar Stripe HEXFET ? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
Typical Applications
● Industrial Motor Drive
產(chǎn)品屬性
- 型號:
IRF3808LPBF
- 功能描述:
MOSFET N-CH 75V 106A TO-262
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
21+ |
TO-220A |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
23+ |
TO-220AB- |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
18+ |
TO-220 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
IR |
24+ |
TO-220AB |
45000 |
絕對全新原裝公司長期有貨 |
詢價 | ||
IR |
21+ |
TO-220 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
INFINEON |
23+ |
TO-220 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
TO-220 |
5500 |
現(xiàn)貨,全新原裝 |
詢價 | ||
IR |
24+ |
TO-262-3 |
140 |
詢價 | |||
IR |
2016+ |
TO220 |
6523 |
只做進口原裝現(xiàn)貨!或訂貨假一賠十! |
詢價 |