首頁 >IRF3808LPBF>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRF3808LPBF

Advanced Process Technology

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808LPBF

Advanced Process Technology

IRF

International Rectifier

IRF3808PBF

HEXFETPowerMOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF3808S

AUTOMOTIVEMOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper

IRF

International Rectifier

IRF3808S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3808SLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF3808SPBF

AUTOMOTIVEMOSFET

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808SPBF

AdvancedProcessTechnology

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF3808STRRPBF

HighEfficiencySynchronousRectificationinSMPS

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

LP3808

High-precisionLowVoltageDetector

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

LT3808

LowInputVoltage,SynchronousStep-DownDC/DCController

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808

NoRSENSE,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808

NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808EDE

NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC3808EGN

NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

M3808

TiteSnap-In-2?LiquidTightCordgrips

HeycoHeyco.

???/span>海科(Heyco)

MIC3808

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MIC3808

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MICMIC GROUP RECTIFIERS

昌福電子昌福電子有限公司

MIC3808BM

Push-PullPWMController

GeneralDescription TheMIC3808andMIC3809areafamilyofcomplementaryoutputpush-pullPWMcontrolICsthatfeaturehighspeedandlowpowerconsumption.TheMIC3808/9areidealfortelecomlevel(36Vto75V)isolatedstepdowndc/dcconversionapplicationswherehighoutputcurrent,small

MICMIC GROUP RECTIFIERS

昌福電子昌福電子有限公司

詳細(xì)參數(shù)

  • 型號:

    IRF3808LPBF

  • 功能描述:

    MOSFET N-CH 75V 106A TO-262

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-262-3
140
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
INFINEON
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
23+
TO-262
10000
公司只做原裝正品
詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價
Infineon Technologies
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實單
詢價
Infineon Technologies
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品,支持實單
詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
詢價
Infineon Technologies
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
更多IRF3808LPBF供應(yīng)商 更新時間2024-10-25 11:18:00