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IRF530NLPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF530NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRF530NS

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530NS

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NS

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NS

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRF530NLHR

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-262-3
1790
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-262-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價(jià)
ir
24+
500000
行業(yè)低價(jià),代理渠道
詢價(jià)
IR
22+
TO-262
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
TO-262
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
TO-262
7000
詢價(jià)
IR
1215+
TO-220
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
詢價(jià)
IR
1250
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
詢價(jià)
更多IRF530NLHR供應(yīng)商 更新時(shí)間2025-3-15 16:30:00