首頁 >IRF6215RLPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF6215RLPBF | Advanced Process Technology | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPOWERMOSFET(VDSS=-150V,RDS(on)=0.29廓,ID=-13A) ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-150V,Rds(on)=0.295ohm,Id=-13A) | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
175?COperatingTemperature | IRF International Rectifier | IRF | ||
175?COperatingTemperature | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
175?COperatingTemperature | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
175?COperatingTemperature | IRF International Rectifier | IRF | ||
P-channelEnhancementModePowerMOSFET Features ?VDS=-150V,ID=-15A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
AUTOMOTIVEGRADE | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-150V,Rds(on)=0.295ohm,Id=-13A) | IRF International Rectifier | IRF |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2015+ |
D2-Pak |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
24+ |
SMD |
6430 |
新進(jìn)庫存/原裝 |
詢價 | ||
IR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
TO |
800 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
IR |
23+ |
D2-Pak |
8600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
16+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
IR |
24+ |
TO-263 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 |
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