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IRFR6215PBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFR6215PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? P-Channel
? 175°C Operating Temperature
? Surface Mount (IRFR6215)
? Straight Lead (IRFU6215)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號：
IRFR6215PBF
- 功能描述：
MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
NA/ |
3260 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
1732+ |
TO-252 |
50 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/英飛凌 |
11+ |
TO-252 |
2 |
深圳原裝無鉛現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-252 |
2 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
22+ |
TO-252 |
9000 |
原裝正品 |
詢價 | ||
IR |
17+ |
TO-252 |
6200 |
詢價 | |||
IR |
23+ |
TO-252 |
3053 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
INFINEON |
24+ |
TO-252 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-252 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
2447 |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
