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IRFR6215PBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFR6215PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? P-Channel
? 175°C Operating Temperature
? Surface Mount (IRFR6215)
? Straight Lead (IRFU6215)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號(hào):
IRFR6215PBF
- 功能描述:
MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價(jià) | ||
IR |
22+ |
TO-252 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
IR |
17+ |
TO-252 |
6200 |
詢價(jià) | |||
InternationRectifer |
22+ |
NA |
30000 |
100%全新原裝 假一賠十 |
詢價(jià) | ||
INFINEON |
2022+ |
TO-252 |
57550 |
詢價(jià) | |||
IR |
22+ |
TO-252 |
9000 |
原裝正品 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
181145 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
2021+ |
TO-252 |
3500 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
2 |
只做原廠渠道 可追溯貨源 |
詢價(jià) |