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IRFR5505PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR5505PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR5505)
● Straight Lead (IRFU5505)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR5505PBF
- 功能描述：
MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO252 |
60 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
QFN32 |
37500 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
` |
24+ |
BGA |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
vishay |
2023+ |
TO-252 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
IR |
23+ |
NA/ |
3423 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
24+ |
65230 |
詢價 |
