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IRFR5410PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR5410PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR5410)
● Straight Lead (IRFU5410)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR5410PBF
- 功能描述：
MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
12999 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
TO-252 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價 | ||
IR |
24+ |
TO252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
DPAK |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
TO-252 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
1223 |
510 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
NA |
19+ |
75035 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | |||
IR |
22+ |
TO252 |
9000 |
原裝正品 |
詢價 | ||
IR |
23+ |
TO-252 |
3051 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
IR |
24+ |
TO-252 |
35200 |
一級代理/放心采購 |
詢價 |
