IRF6603中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
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Description
The IRF6603 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào)：
IRF6603
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
1160 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
3998 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價(jià) | ||
IR |
1211+ |
SC70-5 |
4268 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
SC70-5 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
IR |
24+ |
65230 |
詢價(jià) | ||||
IR |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
QFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
BGA |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
2022 |
QFN |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) |
