IRF6626中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6626規(guī)格書詳情
Description
The IRF6626 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS compliant containing no lead or bromide
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Ultra Low Package Inductance
? Optimized for High Frequency Switching
? Ideal for CPU Core DC-DC Converters
? Optimized for both Sync. FET and some Control FET applications
? Low Conduction and Switching Losses
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6626
- 功能描述：
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
DirectFET |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
21+ |
DirectFET |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
SOT223 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
18+ |
SMD |
19278 |
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票 |
詢價 | ||
IR |
22+ |
SMD |
18000 |
只做全新原裝,支持BOM配單,假一罰十 |
詢價 | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
IOR |
2006 |
DIRECTFET |
491 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 |
