IRF6648中文資料IRF數據手冊PDF規(guī)格書

Description

The IRF6648 combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

● RoHs Compliant Containing No Lead and Bromide

● Low Profile (<0.7 mm)

● Dual Sided Cooling Compatible

● Ultra Low Package Inductance

● Optimized for High Frequency Switching

● Optimized for Synchronous Rectification for 5V to 12V outputs

● Ideal for 24V input Primary Side Forward Converters

● Low Conduction Losses

● Compatible with Existing Surface Mount Techniques