首頁>IRF6691TRPBF>規(guī)格書詳情
IRF6691TRPBF中文資料IRF數(shù)據手冊PDF規(guī)格書
IRF6691TRPBF規(guī)格書詳情
Description
The IRF6691PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHs Compliant
● Lead-Free (Qualified up to 260°C Reflow)
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● High Cdv/dt Immunity
● Low Profile (<0.7mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
產品屬性
- 型號：
IRF6691TRPBF
- 功能描述：
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2023+ |
DIRECTFET |
6893 |
十五年行業(yè)誠信經營,專注全新正品 |
詢價 | ||
IR |
23+ |
NA/ |
632 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
DIRECTFET |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
22+23+ |
DIRECTFET |
9913 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
DIRECTFET |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
DIRECTFET |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 | |||
只做原裝 |
24+ |
DIRECTFET |
36520 |
一級代理/放心采購 |
詢價 | ||
IR |
17+ |
DIRECTF |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
