IRF6N60FP中文資料SUNTAC數(shù)據(jù)手冊PDF規(guī)格書
IRF6N60FP規(guī)格書詳情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
● Robust High Voltage Termination
● Avalanche Energy Specified
● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
● Diode is Characterized for Use in Bridge Circuits
● IDSS Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
IRF6N60FP
- 制造商：
SUNTAC
- 制造商全稱：
SUNTAC
- 功能描述：
POWER MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
Micro8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IOR |
24+ |
SMD-8 |
50000 |
詢價(jià) | |||
IR |
24+ |
DIP |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢! |
詢價(jià) | ||
IR |
23+ |
DIP |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
DIP |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
7000 |
詢價(jià) | |||
IR |
20+ |
Micro8 |
49000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
IR |
22+ |
TO-220 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IOR |
23+ |
SOP |
9980 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
IR |
2339+ |
SOP-8 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) |
