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IRF6N60FP

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRFIB6N60A

PowerMOSFET(Vdss=600V,Rds(on)max=0.75ohm,Id=5.5A)

Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching HighVoltageIsolation=2.5KVRMS? Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacteri

IRF

International Rectifier

IRFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIB6N60APBF

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

IRFIB6N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KF6N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A

KECKEC CORPORATION

KEC株式會社

KF6N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A

KECKEC CORPORATION

KEC株式會社

KSM6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF6N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMI6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU6N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

MDF6N60

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

MDF6N60TH

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

MDP6N60

N-ChannelMOSFET600V,6A,1.4ohm

MGCHIP

MagnaChip Semiconductor.

詳細(xì)參數(shù)

  • 型號：

    IRF6N60FP

  • 制造商：

    SUNTAC

  • 制造商全稱：

    SUNTAC

  • 功能描述：

    POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INFINEON
23+
92
原裝正品現(xiàn)貨,德為本,正為先,通天下!
 詢價(jià)
IR
24+
DIP
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!
 詢價(jià)
IR
23+
DIP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
DIP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
TI/德州儀器
23+
TO
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
IOR
23+
SOP
9980
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
IOR
24+
SMD-8
50000
詢價(jià)
IR
2339+
SOP-8
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
更多IRF6N60FP供應(yīng)商 更新時(shí)間2025-1-14 10:30:00

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