首頁>IRF7104TRPBF>規(guī)格書詳情
IRF7104TRPBF中文資料IRF數據手冊PDF規(guī)格書
IRF7104TRPBF規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Adavanced Process Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
產品屬性
- 型號:
IRF7104TRPBF
- 功能描述:
MOSFET MOSFT DUAL PCh -20V 2.3A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
SO8 |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
INFINEON/英飛凌 |
20+ |
SO-8 |
4000 |
詢價 | |||
IR |
24+ |
SOP-8 |
500560 |
免費送樣原盒原包現貨一手渠道聯系 |
詢價 | ||
IOR |
22+23+ |
SOP8 |
34444 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
Infineon/英飛凌 |
21+ |
SO-8_3.9mm |
6820 |
只做原裝,質量保證 |
詢價 | ||
IR |
24+ |
SOIC-8 |
21332 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IOR |
24+ |
SMD-8 |
114400 |
詢價 | |||
英飛凌/INFINEON |
22+ |
SOP8L |
26757 |
原裝正品現貨 |
詢價 | ||
Infineon(英飛凌) |
23+ |
SOP-8 |
10613 |
支持大陸交貨,美金交易。原裝現貨庫存。 |
詢價 |