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首頁 >IRF730NPFB>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF730PBF	文件：134.68 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730PBF	文件：3.58963 Mbytes Page：7 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF730PBF	文件：1.17645 Mbytes Page：6 Pages	6.5A,400VHeatsinkN-ChannelTypePowerMOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
IRF730PBF	文件：156.83 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730S	文件：262.3 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRF730S	文件：1.42874 Mbytes Page：5 Pages	N-ChannelMOSFET ■Features ●VDS(V)=400V ●ID=5.5A(VGS=10V) ●RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司	KEXIN
IRF730S	文件：173.99 Kbytes Page：9 Pages	RepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730S	文件：192.81 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730SPBF	文件：893.24 Kbytes Page：8 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRFI730B	文件：681.53 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI730G	文件：1.57493 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI730G	文件：914.21 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI730GPBF	文件：923.29 Kbytes Page：7 Pages	HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.	IRF International Rectifier	IRF
IRFI730GPBF	文件：1.57493 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI730GPBF	文件：914.21 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFS730	文件：1.06469 Mbytes Page：6 Pages	N-CHANNELMOSFETinaTO-220FPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN
IRFS730	文件：270.49 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFS730A	文件：266.83 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=400V ■LowerRDS(ON):0.765Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFS730A	文件：264.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFS730B	文件：898.57 Kbytes Page：10 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	IRF730NPFB	IR	22+	TO-220	6000	終端可免費供樣,支持BOM配單	詢價
深圳市安富世紀(jì)電子有限公司	IRF730NPFB	IR	23+	TO-220	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRF730NPFB	IR	23+	TO-220	7000		詢價
深圳市勤思達(dá)科技有限公司	IRF730NS	IR	12+	TO-263	15000	全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。	詢價
深圳市一線半導(dǎo)體有限公司	IRF730NS	IR	24+	TO-263	430		詢價
上海市鑫鴻達(dá)電子	IRF730NS	SAMSUNG/三星	2022+		580	全新原裝貨期兩周	詢價
深圳市鼎欣微電子有限公司	IRF730NS	IR	21+	TO-263	30000	只做正品原裝現(xiàn)貨	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRF730NS	IR/VISHAY	23+	D2-PAK	6000	原裝正品，支持實單	詢價
深圳市明嘉萊科技有限公司	IRF730NS	SAMSUNG/三星	0728+	IRFW730ATM	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價
深圳市創(chuàng)新跡電子有限公司	IRF730NS	IR/VISHAY	22+	D2-PAK	25000	只做原裝進口現(xiàn)貨,專注配單	詢價

更多IRF730NPFB供應(yīng)商更新時間2025-1-7 14:00:00

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