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IRF7341PBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7341PBF

Generation V Technology

IRF

International Rectifier

IRF7341PBF_15

Generation V Technology

IRF

International Rectifier

IRF7341Q

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17

IRF

International Rectifier

IRF7341QPBF

HEXFET?PowerMOSFET

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341TR

MOSFET

Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7341TR

GenerationVTechnology

TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRF7341TR

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7341TRPBF

DualN-Channel60V(D-S)175?CMOSFET

FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF7341TRPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

ISO7341C

RobustEMC,Low-Power,Quad-ChannelReinforcedDigitalIsolators

TI1Texas Instruments

德州儀器

ISO7341CDW

RobustEMC,Low-Power,Quad-ChannelReinforcedDigitalIsolators

TI1Texas Instruments

德州儀器

ISO7341CDWR

RobustEMC,Low-Power,Quad-ChannelReinforcedDigitalIsolators

TI1Texas Instruments

德州儀器

ISO7341FC

RobustEMC,Low-Power,Quad-ChannelReinforcedDigitalIsolators

TI1Texas Instruments

德州儀器

ISO7341FCDW

RobustEMC,Low-Power,Quad-ChannelReinforcedDigitalIsolators

TI1Texas Instruments

德州儀器

ISO7341FCDWR

RobustEMC,Low-Power,Quad-ChannelReinforcedDigitalIsolators

TI1Texas Instruments

德州儀器

LM7341

Rail-to-RailInput/Output?15V,4.6MHzGBW,OperationalAmplifierinSOT-23Package

TITexas Instruments

德州儀器美國德州儀器公司

LM7341

?15V,4.6MHzGBW,OperationalAmplifierinSOT-23Package

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    IRF7341PBF

  • 功能描述：

    MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
21+
SOP8
20000
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
SOP-8
49
只做原廠渠道 可追溯貨源
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2020+
SOP8
17
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2017+
SOP-8
6528
只做原裝正品!假一賠十!
 詢價
IR
23+
SOP8
7750
全新原裝優(yōu)勢
 詢價
Infineon
18+
NA
3474
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
19+
SOP8
74634
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IR
22+
SOP-8
12596
原裝正品現(xiàn)貨
 詢價
更多IRF7341PBF供應(yīng)商 更新時間2024-12-21 10:10:00

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