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IRF740LPBF

SMPS MOSFET

Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandC

IRF

International Rectifier

IRF740PBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF740PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740PBF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF740PBF

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRF740PBF

10A,400VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF740PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740S

N-CHANNEL400V-0.48ohm-10A-D2PAKPowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.48? ■EXTREMELYHIGHdv/dtCAPABILITY ■100

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF740S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740SPBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=0.55廓,ID=10A)

IRF

International Rectifier

IRF740SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF740STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A)

Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp

IRF

International Rectifier

IRFI740A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI740B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI740G

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A)

Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp

IRF

International Rectifier

IRFI740G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRF740LPBF

  • 制造商:

    Vishay Angstrohm

  • 功能描述:

    Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
IR
22+
N/A
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
N/A
8000
只做原裝現(xiàn)貨
詢價
IR
23+
N/A
7000
詢價
IR
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
23+
TO-220
30000
房間原裝現(xiàn)貨特價熱賣,有單詳談
詢價
IR
2022
DIP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
IR
2122+
TO220
19990
全新原裝正品現(xiàn)貨,優(yōu)勢渠道可含稅,假一賠十
詢價
IR
22+
TO-220
9723
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價
IR
2023+
TO220
118
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詢價
更多IRF740LPBF供應(yīng)商 更新時間2025-1-3 9:01:00