首頁>IRF7807VD2PBF>規(guī)格書詳情
IRF7807VD2PbF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7807VD2PbF規(guī)格書詳情
Description
The FETKY? family of Co-Pack HEXFET? MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
? Co-Pack N-channel HEXFET? Power MOSFET
and Schottky Diode
? Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
? Low Conduction Losses
? Low Switching Losses
? Low Vf Schottky Rectifier
? Lead-Free
產(chǎn)品屬性
- 型號：
IRF7807VD2PBF
- 功能描述：
MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
SOP8 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
IR |
SOP8 |
9500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
Infineon Technologies |
21+ |
8SOIC |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IRF7807VD2PBF |
3596 |
3596 |
詢價 | ||||
Infineon Technologies |
23+ |
8SOIC |
9000 |
原裝正品，支持實單 |
詢價 | ||
IR |
22+23+ |
SOP8 |
35836 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
24+ |
SOP8 |
5000 |
詢價 | |||
IR |
2016+ |
SOP8 |
5562 |
只做進口原裝現(xiàn)貨!或訂貨!假一賠十! |
詢價 | ||
IR |
23+ |
SOP8 |
9562 |
詢價 |
