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IRF8313TRPbF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF8313TRPbF規(guī)格書詳情
Description
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Benefits
● Low Gate Charge and Low RDS(on)
● Fully Characterized Avalanche Voltage and Current
● 20V VGS Max. Gate Rating
● 100 Tested for RG
● Lead-Free (Qualified to 260°C Reflow)
● RoHS Compliant (Halogen Free)
Applications
● Load Switch
● DC/DC Conversion
產(chǎn)品屬性
- 型號：
IRF8313TRPBF
- 功能描述：
MOSFET MOSFT DUAL NCh 30V 9.7A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
SOP |
20000 |
主營IR可含稅只做全新原裝正品現(xiàn)貨 |
詢價 | ||
IR英飛凌 |
2013 |
SO-8 |
20 |
原裝正品現(xiàn)貨 |
詢價 | ||
Infineon/英飛凌 |
23+ |
SOIC-8_150mil |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
IR |
2024+ |
SMDDIP |
3298 |
原廠全新正品供應(yīng)商 |
詢價 | ||
Infineon/英飛凌 |
21+ |
SOIC-8_150mil |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon(英飛凌) |
23+ |
SOP-8 |
11048 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
詢價 | ||
INFINEON/英飛凌 |
23+ |
SOIC-8 |
50000 |
原裝正品 支持實(shí)單 |
詢價 | ||
INFINEON |
2022+ |
SOP-8 |
57550 |
詢價 | |||
INFINEON |
24+ |
SOP-8 |
4000 |
只做原裝 有掛有貨 假一賠十 |
詢價 |
