IRF840LC中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.

These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

FEATURES

? Ultra Low Gate Charge

? Reduced Gate Drive Requirement

? Enhanced 30 V VGS Rating

? Reduced Ciss, Coss, Crss

? Extremely High Frequency Operation

? Repetitive Avalanche Rated

? Compliant to RoHS Directive 2002/95/EC