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首頁 >IRF840LC>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF840LC	文件：1.51385 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LC	文件：319.07 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF840LC	文件：157.63 Kbytes Page：8 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCL	文件：1.028819 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCL	文件：175.22 Kbytes Page：9 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCL	文件：231.4 Kbytes Page：10 Pages	Power MOSFET FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Extremelyhighfrequencyoperation ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCL	文件：173.93 Kbytes Page：10 Pages	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThisnewseriesoflowchargeHEXFET?powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem	IRF International Rectifier	IRF
IRF840LCLPBF	文件：1.028819 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCPBF	文件：1.51385 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCS	文件：1.028819 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCS	文件：175.22 Kbytes Page：9 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCS	文件：231.4 Kbytes Page：10 Pages	Power MOSFET FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Extremelyhighfrequencyoperation ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCS	文件：173.93 Kbytes Page：10 Pages	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThisnewseriesoflowchargeHEXFET?powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem	IRF International Rectifier	IRF
IRF840LCS_V01	文件：231.4 Kbytes Page：10 Pages	Power MOSFET FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Extremelyhighfrequencyoperation ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCSPBF	文件：1.028819 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCSTRR	文件：1.028819 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCSTRRPBF	文件：175.22 Kbytes Page：9 Pages	Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LC_V01	文件：157.63 Kbytes Page：8 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF840LCL	文件：156.42 Kbytes Page：2 Pages	Power MOSFET	TEL TRANSYS Electronics Limited	TEL
IRF840LCLPBF	文件：231.4 Kbytes Page：10 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號：
IRF840LC
功能描述：
MOSFET N-Chan 500V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRF840LC	IR	17+	TO-220AB	31518	原裝正品可含稅交易	詢價(jià)
深圳市星佑電子有限公司	IRF840LC	ir	06+	TO-220	12500	自己公司全新庫存絕對有貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRF840LC	IR	2015+	TO-220AB	12500	全新原裝,現(xiàn)貨庫存長期供應(yīng)	詢價(jià)
深圳市昌和盛利電子有限公司	IRF840LC	IR	23+	TO-220	35890		詢價(jià)
深圳市博浩通科技有限公司	IRF840LC	IR	23+	TO-220AB	8600	全新原裝現(xiàn)貨	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF840LC	IR	24+	TO220	500		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRF840LC	Vishay	1822+	TO-220AB	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
深圳市賽芯源科技有限公司	IRF840LC	Vishay	18+	TO-220AB	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)
瀚佳科技(深圳)有限公司	IRF840LC	IR	24+	TO-220AB	16800	絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IRF840LC	SHARP/夏普	23+	DIP-3	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)

更多IRF840LC供應(yīng)商更新時(shí)間2025-1-3 14:00:00

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