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IRF840LCL中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF840LCL
廠商型號(hào)

IRF840LCL

功能描述

Power MOSFET

文件大小

1.028819 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-19 22:30:00

IRF840LCL規(guī)格書詳情

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.

These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications.

FEATURES

? Halogen-free According to IEC 61249-2-21 Definition

? Ultra Low Gate Charge

? Reduced Gate Drive Requirement

? Enhanced 30 V VGS Rating

? Reduced Ciss, Coss, Crss

? Extremely High Frequency Operation

? Repetitive Avalanche Rated

? Compliant to RoHS Directive 2002/95/EC

產(chǎn)品屬性

  • 型號(hào):

    IRF840LCL

  • 功能描述:

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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80000
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IR
07+08+
TO-262
671
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IR/VISHAY
22+
TO-262
100000
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IR
23+
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IR
24+
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VISHAY
11+
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16000
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IR
2016+
TO-262
6528
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VISHAY
24+
TO-263
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VISHAY
2018+
26976
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