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IRF9140

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9140

P-CHANNEL POWER MOSFET

FEATURES ?HERMETICALLYSEALEDTO–3METALPACKAGE ?SIMPLEDRIVEREQUIREMENTS ?SCREENINGOPTIONSAVAILABLE

SEME-LAB

Seme LAB

IRF9140

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreve

IRF

International Rectifier

IRF9140

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF9140

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

-19A,-100V,0.200Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow

Intersil

Intersil Corporation

IRF9140

Simple Drive Requirements

IRF

International Rectifier

IRF9140

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF9140_15

Simple Drive Requirements

IRF

International Rectifier

IRFM9140

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM9140

SimpleDriveRequirements

IRF

International Rectifier

IRFN9140

POWERMOSFETSURFACEMOUNT(SMD-1)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

POWERMOSFETN-CHANNEL(BVdss=-100V,Rds(on)=0.20ohm,Id=-18A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

SimpleDriveRequirements

IRF

International Rectifier

IRFN9140SMD

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP9140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP9140

19A,100V,0.200Ohm,P-ChannelPowerMOSFET

ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導體

IRFP9140

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRF9140

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET P-CH 100V 18A 3-Pin(2+Tab) TO-3

  • 功能描述：

    TRANS MOSFET P-CH 100V 18A 2PIN TO-204AA - Bulk

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    P CHANNEL MOSFET, TO-3, LAW - Bulk

  • 功能描述：

    MOSFET P TO-3

  • 功能描述：

    MOSFET, P, TO-3

  • 功能描述：

    Single P-Channel 100 V 125 W 60 nC Hexfet Transistors Through Hole - TO-3

  • 功能描述：

    P CH MOSFET, -100V, 18A, TO-204AA; Transistor

  • Polarity：

    P Channel; Continuous Drain Current

  • Id：

    -18A; Drain Source Voltage

  • Vds：

    -100V; On Resistance

  • Rds(on)：

    200mohm; Rds(on) Test Voltage

  • Vgs：

    -10V; Threshold Voltage Vgs

  • Typ：

    -4V ;RoHS

  • Compliant：

    No

  • 制造商：

    TT Electronics/Semelab

  • 功能描述：

    MOSFET P-Channel 100V 18A TO-3

供應商型號品牌批號封裝庫存備注價格
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR/MOT
16+
TO-3
200
原裝現(xiàn)貨假一罰十
 詢價
HARINR
23+
原廠原裝
6000
全新原裝
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
21+
TO-3
12588
原裝正品,自己庫存 假一罰十
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
200
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
IR
2020+
TO-3
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR
2023+
TO-3
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IR
24+
TO-3
35210
一級代理/放心采購
 詢價
更多IRF9140供應商 更新時間2025-1-8 16:31:00

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