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IRFN9140

POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

POWER MOSFET SURFACE MOUNT (SMD-1)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFN9140

Simple Drive Requirements

IRF

International Rectifier

IRFN9140_15

Simple Drive Requirements

IRF

International Rectifier

IRFN9140SMD

P-CHANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFP9140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9140

19A,100V,0.200Ohm,P-ChannelPowerMOSFET

ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9140

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9140

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140N

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140N

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140N

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-23A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.117Ω(Max)@VGS=-10V DESCRIPTION ·Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand rel

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9140NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFP9140PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9140PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFP9140PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    IRFN9140

  • 制造商：

    International Rectifier

  • 功能描述：

    EXFET, Hi-Rel, -100v, -18A, .32 Ohohms, SMD-1

  • 功能描述：

    TRANS MOSFET P-CH 100V 18A 3SMD-1 - Bulk

  • 功能描述：

    P CHANNEL MOSFET, -100V, 18A, SMD-1; Transistor

  • Polarity：

    P Channel; Continuous Drain Current

  • Id：

    -18A; Drain Source Voltage

  • Vds：

    -100V; On Resistance

  • Rds(on)：

    200mohm; Rds(on) Test Voltage

  • Vgs：

    -10V; Threshold Voltage Vgs

  • Typ：

    -4V ;RoHS

  • Compliant：

    No

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
專業(yè)軍工
SMD-1
860
只做原裝正品現(xiàn)貨授權(quán)貨源
 詢價
IR
23+
SMD-1
66800
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！
 詢價
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
IR
2020+
原廠封裝
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
18+
SMD-1
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
IR
18
SMD-1
200
進口原裝正品優(yōu)勢供應(yīng)
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
WSI
CDIP
3647
萊克訊每片來自原廠!價格超越代理!只做進口原裝!
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更多IRFN9140供應(yīng)商 更新時間2025-1-11 13:52:00

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