IRF840LCS中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF840LCS規(guī)格書詳情
Description
This new series of low charge HEXFET?power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.
These device improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs offer the designer a new power transistor standard for switching applications.
● Ultra Low Gate Charge
● Reduced Gate Drive Requirement
● Enhanced 30V VGS Rating
● Reduced CISS, COSS, CRSS
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
產(chǎn)品屬性
- 型號：
IRF840LCS
- 功能描述：
MOSFET N-Chan 500V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+23+ |
TO-263 |
26984 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
1822+ |
TO263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
IR |
99+ |
TO-263 |
750 |
詢價 | |||
IR |
TO-263 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
D2-PAK |
8000 |
原裝正品支持實單 |
詢價 | ||
IOR |
24+ |
TO220 |
30 |
詢價 | |||
IRF840LCS |
21442 |
21442 |
詢價 | ||||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR/VISHAY |
22+ |
TO-263 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
IR |
24+ |
D2-PAK |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 |
