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IRF9132

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-10A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9132

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9132

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFF9132

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP9132

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9132

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9132

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9132

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-10A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS9132

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-6.9A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS9132

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF9132

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    P CHANNEL MOSFET, TO-3, LAW - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-3
3000
特價庫存
 詢價
IOR
新
3
全新原裝 貨期兩周
 詢價
IR
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
IR
24+
TO-3
35210
一級代理/放心采購
 詢價
IR
22+
TO-3
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
TO-3
7000
詢價
更多IRF9132供應(yīng)商 更新時間2025-3-15 14:30:00

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