IRFF9132中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IRFF9132 |
| 功能描述 | Avalanche-Energy-Rated P-Channel Power MOSFETs |
| 文件大小 |
687.87 Kbytes |
| 頁面數(shù)量 |
2 頁 |
| 生產(chǎn)廠商 | New Jersey Semi-Conductor Products, Inc. |
| 企業(yè)簡稱 |
NJSEMI【新澤西半導(dǎo)體】 |
| 中文名稱 | 新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-3-29 23:00:00 |
| 人工找貨 | IRFF9132價格和庫存，歡迎聯(lián)系客服免費人工找貨 |
IRFF9132規(guī)格書詳情
-5.5A and -6.5A, -60Vand-100V rDS(on) = 0.30Ω and 0.40Ω
The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.
The IRFF-types are supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) metal package
Features:
■ Single pulse avalanche energy rated
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
產(chǎn)品屬性
- 型號：
IRFF9132
- 制造商：
Harris Corporation
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
IR |
2020+ |
CAN3 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
CAN3 |
54 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | |||
ir |
2023+ |
原廠封裝 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
INTERSIL |
24+ |
CAN |
1000 |
詢價 | |||
HARRIS/哈里斯 |
23+ |
94 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IRFF9133 |
1 |
1 |
詢價 | ||||
ST |
新 |
3 |
全新原裝 貨期兩周 |
詢價 | |||
HARRIS/哈里斯 |
23+ |
94 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
CAN3 |
7000 |
詢價 |
