IRFF9120中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFF9120規(guī)格書詳情
4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Features
? 4A, 100V
? rDS(ON) = 0.60?
? Single Pulse Avalanche Energy Rated
? SOA is Power-Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
產(chǎn)品屬性
- 型號：
IRFF9120
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET P-CH 100V 4A 3-Pin TO-39
- 功能描述：
TRANS MOSFET P-CH 100V 4A 3PIN TO-39 - Bulk
- 制造商：
Rochester Electronics LLC
- 功能描述：
HEXFET, HI-REL - Bulk
- 功能描述：
P CH MOSFET -100V 4A TO-205
- 功能描述：
P CH MOSFET, -100V, 4A, TO-205AF
- 功能描述：
Single P-Channel 100 V 20 W 16.3nC Hexfet Power Mosfet Through Hole - TO-39
- 功能描述：
P CH MOSFET, -100V, 4A, TO-205AF; Transistor
- Polarity：
P Channel; Continuous Drain Current
- Id：
-4A; Drain Source Voltage
- Vds：
-100V; On Resistance
- Rds(on)：
600mohm; Rds(on) Test Voltage
- Vgs：
-10V; Threshold Voltage Vgs
- Typ：
-4V ;RoHS
- Compliant：
No
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
CAN3 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
24+ |
SMD |
4 |
“芯達集團”專營軍工百分之百原裝進口 |
詢價 | ||
IR |
2020+ |
CAN3 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
HAR |
23+ |
CAN |
2550 |
優(yōu)勢庫存 |
詢價 | ||
IR |
NA |
8600 |
原裝正品,歡迎來電咨詢! |
詢價 | |||
IR |
22+ |
CN3 |
8000 |
原裝正品支持實單 |
詢價 | ||
原裝HARRIS |
23+ |
CAN3 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
原裝HARRIS |
23+ |
CAN3 |
7000 |
詢價 | |||
IOR |
專業(yè)鐵帽 |
CAN3 |
1290 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
IR |
23+ |
CAN3 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
