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IRFF9120

4A, 100V, 0.60 Ohm, P-Channel Power MOSFET

4A,100V,0.60Ohm,P-ChannelPowerMOSFET ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringh

Intersil

Intersil Corporation

IRFF9120

P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SEME-LAB

Seme LAB

IRFF9120

P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFP9120

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR/U9120N

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9120

5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9120

PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A)

DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead

IRF

International Rectifier

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR9120

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9120,SiHFR9120) ?Straightlead(IRFU9120,SiHFU9120) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9120

-100VP-ChannelEnhancementModeMOSFET

GeneralFeatures Vbs=-100V,Ip=-8A Rosin)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司(簡稱UMW?)

IRFR9120

-100VP-ChannelEnhancementModeMOSFET

GeneralFeatures VDS=-100V,ID=-8A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRFR9120N

PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.6A)

IRF

International Rectifier

IRFR9120N

UltraLowOn-Resistance

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications.

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120N

-100VP-ChannelEnhancementModeMOSFET

GeneralFeatures VDS=-100V,ID=-8A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRFR9120N

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-6.6A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.48Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFF9120

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET P-CH 100V 4A 3-Pin TO-39

  • 功能描述：

    TRANS MOSFET P-CH 100V 4A 3PIN TO-39 - Bulk

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    HEXFET, HI-REL - Bulk

  • 功能描述：

    P CH MOSFET -100V 4A TO-205

  • 功能描述：

    P CH MOSFET, -100V, 4A, TO-205AF

  • 功能描述：

    Single P-Channel 100 V 20 W 16.3nC Hexfet Power Mosfet Through Hole - TO-39

  • 功能描述：

    P CH MOSFET, -100V, 4A, TO-205AF; Transistor

  • Polarity：

    P Channel; Continuous Drain Current

  • Id：

    -4A; Drain Source Voltage

  • Vds：

    -100V; On Resistance

  • Rds(on)：

    600mohm; Rds(on) Test Voltage

  • Vgs：

    -10V; Threshold Voltage Vgs

  • Typ：

    -4V ;RoHS

  • Compliant：

    No

供應商型號品牌批號封裝庫存備注價格
INTERSIL
24+
TO-39
522
詢價
HARRIS
16+
CAN3
1200
原裝現(xiàn)貨假一罰十
 詢價
HAR
23+
CAN
2550
優(yōu)勢庫存
 詢價
IR
2018+
SMD
4
“芯達集團”專營軍工百分之百原裝進口
 詢價
IR
21+
CAN3
12588
原裝正品,自己庫存 假一罰十
 詢價
IOR
專業(yè)鐵帽
CAN3
1290
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
IR
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
IR
2020+
CAN3
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
HARRIS
24+
CAN3
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
IR
23+
CAN3
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
更多IRFF9120供應商 更新時間2024-10-31 16:30:00

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