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IRFF9210

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-Channel MOSFET in a Hermetically sealed TO39

SEME-LAB

Seme LAB

IRFF9210

Simple Drive Requirements

IRF

International Rectifier

IRFF9210_15

Simple Drive Requirements

IRF

International Rectifier

IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFF9210

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET P-CH 200V 1.6A 3-Pin TO-39

  • 功能描述：

    TRANS MOSFET P-CH 200V 1.6A 3PIN TO-39 - Bulk

  • 功能描述：

    P CH MOSFET, -200V, 1.5A, TO-205AF; Transistor

  • Polarity：

    P Channel; Continuous Drain Current

  • Id：

    -1.5A; Drain Source Voltage

  • Vds：

    -200V; On Resistance

  • Rds(on)：

    3mohm; Rds(on) Test Voltage

  • Vgs：

    -10V; Threshold Voltage Vgs

  • Typ：

    -4V ;RoHS

  • Compliant：

    No

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ir
24+
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6980
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HARRIS
24+
CAN3
1200
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IRF
23+
NA
19960
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IR
1822+
CN3
9852
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IOR
專業(yè)鐵帽
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1090
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IR
專業(yè)鐵帽
CAN3
67500
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HARRIS
24+
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6430
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NA
688
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ir
24+
500000
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CHINA
22+
TO-39
640
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更多IRFF9210供應(yīng)商 更新時間2025-2-4 14:00:00

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