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IRFM350

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM350

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM3500.315?14A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransis

IRF

International Rectifier

IRFM350

SimpleDriveRequirements

IRF

International Rectifier

IRFN350

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.315ohm,Id=14A)

RDS(on)0.315? ID14A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRF

International Rectifier

IRFN350

SimpleDriveRequirements

IRF

International Rectifier

IRFP350

16A,400V,0.300Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP350

PowerMOSFET(Vdss=400V,Rds(on)=0.30ohm,Id=16A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP350

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●ImprovedInducttiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3Ppackage

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP350

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP350

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRFH350

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-210AC

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IR
23+
原廠封裝
8238
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8904
6000
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8904
8000
只做原裝現(xiàn)貨
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IR
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8904
7000
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IR
23+
QFN
3000
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IRF
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DFN
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英飛凌
21+
PQFN 3X3 8L
6000
絕對(duì)原裝現(xiàn)貨
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INFINE0N
21+
S3O8 (3x3mm style SuperSO8)
32568
100%進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營
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FAIRCILD
22+
QFN
8000
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INFINEON/英飛凌
2023+
QFN3X3mm
10000
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更多IRFH350供應(yīng)商 更新時(shí)間2025-2-9 14:00:00