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IRF9Z34SPBF規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for low profile applications.
? Advanced Process Technology
? Surface Mount (IRF9Z34S)
? Low-profile through-hole (IRF9Z34L)
? 175°C Operating Temperature
? Fast Switching
? P- Channel
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號：
IRF9Z34SPBF
- 功能描述：
MOSFET P-Chan 60V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-263 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
Vishay Siliconix |
24+ |
D2PAK(TO-263) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
IR |
22+ |
TO-263 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
TO-263 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
SIX |
1535+ |
822 |
詢價 | ||||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Vishay |
23+ |
TO263 |
2560 |
原廠原裝正品 |
詢價 | ||
IR |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
7000 |
詢價 |
