IRFBF20S中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFBF20S規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L/SiHFBF20L) is available for low-profile applications.
FEATURES
? Surface Mount (IRFBF20S/SiHFBF20S)
? Low-Profile Through-Hole (IRFBF20L/SiHFBF20L)
? Available in Tape and Reel
?? (IRFBF20S/SiHFBF20S)
? Dynamic dV/dt Rating
? 150 °C Operating Temperature
? Fast Switching
? Fully Avalanche Rated
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號(hào)：
IRFBF20S
- 功能描述：
MOSFET N-Chan 900V 1.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501345 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
IR |
21+ |
TO-263 |
5587 |
原裝現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
IR |
24+ |
D2-PAK |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
22+ |
D2-PAK |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IOR |
24+ |
TO263 |
230 |
詢價(jià) | |||
NA |
19+ |
74857 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | |||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR/VISHAY |
22+ |
TO-263 |
8900 |
英瑞芯只做原裝正品!!! |
詢價(jià) | ||
IR |
2023+ |
D2-PAK |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
7000 |
詢價(jià) |
