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IRFBF20S

Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount(IRFBF20S) ?Low-profilethrough-hole(IRFBF20L) ?AvailableinTape&Ree

IRF

International Rectifier

IRFBF20S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20S

Power MOSFET

FEATURES ?Surface-mount(IRFBF20S,SiHFBF20S) ?Low-profilethrough-hole(IRFBF20L,SiHFBF20L) ?Availableintapeandreel(IRFBF20S,SiHFBF20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20S_V01

Power MOSFET

FEATURES ?Surface-mount(IRFBF20S,SiHFBF20S) ?Low-profilethrough-hole(IRFBF20L,SiHFBF20L) ?Availableintapeandreel(IRFBF20S,SiHFBF20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20STRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20STRR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides

VishayVishay Siliconix

威世科技威世科技半導體

IRFBF20SPBF

HEXFET Power MOSFET

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFBF20S

  • 功能描述：

    MOSFET N-Chan 900V 1.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
501345
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
23+
TO-263
35890
詢價
INTERNATIONA
06+
原廠原裝
4416
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
2016+
TO-263
6528
只做原裝正品現(xiàn)貨!或訂貨
 詢價
IOR
24+
TO263
230
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價
更多IRFBF20S供應商 更新時間2025-2-25 17:07:00

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