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IRFD020中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFD020
廠(chǎng)商型號(hào)

IRFD020

功能描述

Power MOSFET

文件大小

248.45 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠(chǎng)商 Vishay Siliconix
企業(yè)簡(jiǎn)稱(chēng)

Vishay威世科技

中文名稱(chēng)

威世科技半導(dǎo)體官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-1-26 23:00:00

IRFD020規(guī)格書(shū)詳情

FEATURES

? For automatic insertion

? Compact, end stackable

? Fast switching

? Ease of paralleling

? Excellent temperature stability

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The HVMDIP technology is the key to Vishay’s advanced

line of power MOSFET transistors. The efficient geometry

and unique processing of the HVMDIP design achieves

very low on-state resistance combined with high

transconductance and extreme device ruggedness.

HVMDIPs feature all of the established advantages of

MOSFETs such as voltage control, very fast switching, ease

of paralleling, and temperature stability of the electrical

parameters.

The HVMDIP 4 pin, dual-in-line package brings the

advantages of HVMDIPs to high volume applications where

automatic PC board insertion is desireable, such as circuit

boards for computers, printers, telecommunications

equipment, and consumer products. Their compatibility with

automatic insertion equipment, low-profile and end

stackable features represent the stat-of-the-art in power

device packaging.

產(chǎn)品屬性

  • 型號(hào):

    IRFD020

  • 功能描述:

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
21+
DIP4
5000
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IR
23+
NA/
4127
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IR
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8000
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IR
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IR
24+
1
860000
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VISHAY/威世
99+
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2471
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11562
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SILICONIX
DIP-4
68900
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QFP
3200
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