IRFF112中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
IRFF112規(guī)格書詳情
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, freedom from second breakdown, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
They are well suited for applications such as switching Dower supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
Features:
? FastSwitching
? Low Drive Current
? Ease of Paralleling
? NoSecond Breakdown
? Excellent Temperature Stability
產(chǎn)品屬性
- 型號:
IRFF112
- 制造商:
GESS
- 制造商全稱:
GESS
- 功能描述:
Power MOS Field-Effect Transistors
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NS |
2020+ |
CAN3 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
23+ |
65480 |
詢價 | ||||
HAR |
TO-39 |
10 |
普通 |
詢價 | |||
INTERSIL |
24+ |
TO-39 |
45 |
詢價 | |||
HARRIS |
23+ |
CAN3 |
3260 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
HARRIS/哈里斯 |
2402+ |
TO-39 |
8324 |
原裝正品!實單價優(yōu)! |
詢價 | ||
HARRIS |
21+ |
CAN3 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
HARRIS |
18+ |
CAN3 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
HARRIS/哈里斯 |
23+ |
95 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HARRIS/哈里斯 |
23+ |
95 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |