IRFI4019H-117P中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It

consists of two power MosFET switches connected in half-bridge configuration. The latest process is used

to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and

internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such

as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable

device for Class D audio amplifier applications.

Features

Integrated Half-Bridge Package

Reduces the Part Count by Half

Facilitates Better PCB Layout

Key Parameters Optimized for Class-D Audio Amplifier Applications

Low RDS(ON)for Improved Efficiency

Low Qg and Qsw for Better THD and Improved Efficiency

Low Qrr for Better THD and Lower EMI

Can Delivery up to 200W per Channel into 8? Load in Half-Bridge Configuration Amplifier

Lead-Free Package