首頁>IRFI640G>規(guī)格書詳情

IRFI640G中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFI640G
廠商型號

IRFI640G

功能描述

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A)

文件大小

172.81 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-24 15:52:00

人工找貨

IRFI640G價格和庫存,歡迎聯(lián)系客服免費人工找貨

IRFI640G規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

? Isolated Package

? High Voltage Isolation = 2.5 kVRMS

? Sink to Lead Creepage Dist. = 4.8 mm

? Dynamic dV/dt Rating

? Low Thermal Resistance

產(chǎn)品屬性

  • 型號:

    IRFI640G

  • 功能描述:

    MOSFET N-Chan 200V 9.8 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
IR
23+
TO-220F
35890
詢價
IR
TO220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價
IR
22+
TO-220F
5000
絕對全新原裝現(xiàn)貨
詢價
IR
2020+
TO-220
400
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IR
23+
TO-220F
5000
原裝正品,假一罰十
詢價
SILICONIX (VISHAY)
23+
原廠原封
4150
訂貨1周 原裝正品
詢價
Vishay Siliconix
22+
TO2203 Isolated Tab
9000
原廠渠道,現(xiàn)貨配單
詢價
IR
23+
TO-220Fu
7600
全新原裝現(xiàn)貨
詢價
VISHAY/威世
22+
TO-220-3
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
IR
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價