首頁 >IRFI640G>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRFI640G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640G

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A)

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI640G

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=9.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFI640G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640GPBF

power mosfet

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI640GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI640G_17

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數

  • 型號：

    IRFI640G

  • 功能描述：

    MOSFET N-Chan 200V 9.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
N/A
8000
全新原裝正品,現貨銷售
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現貨價秒殺全網
 詢價
IR
06+
TO-220
5000
全新原裝 絕對有貨
 詢價
IR
23+
TO-220Fu
7600
全新原裝現貨
 詢價
IR
23+
TO-220F
35890
詢價
IR
2020+
TO-220
400
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
IR
23+
TO-220F
5000
原裝正品,假一罰十
 詢價
IR
24+
TO-220FullPak(Iso)
8866
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
Vishay
23+
TO-220F
8560
受權代理!全新原裝現貨特價熱賣!
 詢價
更多IRFI640G供應商 更新時間2025-5-5 12:00:00

相關規(guī)格書

更多

相關庫存

更多