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IRFL014NTRPBF

Marking:FL014N;Package:SOT223;N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

IRFL014NTRPBF

Advanced Process Technology

Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor

IRF

International Rectifier

IRFL014PBF

SurfaceMount,FastSwitching

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?Eas

IRF

International Rectifier

IRFL014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014TR

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014TRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRFL014NTRPBF

  • 功能描述:

    MOSFET MOSFT 55V 1.9A 160mOhm 7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
SOT-223
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
詢價(jià)
IR
2020+
SOT-223
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
INFINEON/IR
18+
SOT-223
2500
詢價(jià)
INFINEON/IR
1907+
NA
5000
20年老字號,原裝優(yōu)勢長期供貨
詢價(jià)
IR
23+
SOT-223
65400
詢價(jià)
IR
2020+
SOT-223
990000
原裝正品,誠信經(jīng)營。
詢價(jià)
INFINEON/英飛凌
2019+
SOT223
78550
原廠渠道 可含稅出貨
詢價(jià)
INFINEON/英飛凌
20+
SOT-223
22500
進(jìn)口原裝支持含稅
詢價(jià)
IR
2021+
D-PAK
9450
原裝現(xiàn)貨。
詢價(jià)
IR
21+
SOT-223
6000
原裝正品
詢價(jià)
更多IRFL014NTRPBF供應(yīng)商 更新時(shí)間2025-1-28 10:15:00